Vertical Mosfet

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A vertical metal-oxide-semiconductor field-effect transistor with the novel feature of a dielectric pocket between the channel and source/drain has been fabricated and tested. These dielectric pocket vertical MOSFETs (DPV-MOSFETs) show an improved suppression of short-channel effects such as V T roll-off and drain induced barrier lowering (DIBL). ZVN4424A, The ZVN4424A is a 240V E-Line N-channel Enhancement Mode Vertical DMOS FET featuring low threshold and fast switching. The MOSFET is ideal for earth recall and dialling switches.

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Microsemi Electronic Components Datasheet

RF POWER VERTICAL MOSFET

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The VRF2933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
VRF2933
50V, 300W, 150MHz
SS
FEATURES
• 300W with 22dB Typ. Gain @ 30MHz, 50V
• Common Source Configuration
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Refractory Gold Metallization
• RoHS Compliant
Symbol
VDSS
ID Continuous Drain Current @ TC = 25°C
PD Total Device dissipation @ TC = 25°C
TJ Operating Junction Temperature Max
VRF2933(MP)
170 V
±40 V
-65 to 150
°C
Symbol
VDS(ON)
IGSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
170 180
V
2.0 μA
2.9 3.6 4.4
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Electronic Components Datasheet

RF POWER VERTICAL MOSFET

No Preview Available !

Symbol
CISS Input Capacitance
Crss Reverse Transfer Capacitance
Symbol
GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
ηD f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
Test Conditions
VDS = 50V
3:1 VSWR - All Phase Angles
Min Typ Max Unit
400 pF
Min Typ Max Unit
dB
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
55
50
40
30
25
15
5 4V
0
10 15
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
1.0E−8
Ciss
1.0E−10
1.0E−11 0
20 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
250µs PULSE
CYCLE
TJ= -55°C
15
5
0
46
VGS, GATE-TO-SOURCE VOLTAGE (V)
100
10
PD Max
TC = 75°C
1
100 800
FIGURE 4, Forward Safe Operating Area

vertical-channel FET
полевой транзистор с вертикальным каналом, полевойтранзистор с вертикальной структурой

Vertical Mosfet Chart

Большой англо-русский и русско-английский словарь. 2001.

Mosfet

Смотреть что такое 'vertical-channel FET' в других словарях:

Vertical Mosfet Tool

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